RTSM series Sic Field Effect Transistors(SIC MOS) 650-1700V 40-1000mohm
|
Silicon carbide field-effect transistor / SiC Field Effect Transistors (SiC MOS) |
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|
Type |
VDS |
RDS(ON) |
ID |
VTH |
VTH |
Og |
Operating Junction |
Package |
|
V |
MOHM |
TJ=25℃ |
TJ=25℃ |
TJ=175℃ |
nC |
℃ |
||
|
RTSH/K0406SM1 |
650 |
40 |
72 |
3.2 |
2.2 |
110.8 |
-55℃ to 175℃ |
TO247-3/4 |
|
RTSH/K0606SM1 |
650 |
60 |
50 |
2.8 |
2.1 |
69.5 |
-55℃ to 175℃ |
|
|
RTSK0406SM1Z |
650 |
40 |
72 |
3.2 |
2.2 |
110.8 |
-55℃ to 175℃ |
TO247-4 |
|
RTSK0606SM1Z |
650 |
60 |
50 |
2.8 |
2.1 |
69.5 |
-55℃ to 175℃ |
|
|
RTST04065M1 |
650 |
40 |
63.5 |
3.2 |
2.2 |
110.8 |
-55℃ to 175℃ |
TOLL |
|
RTST06065M1 |
650 |
60 |
46 |
2.8 |
2.1 |
69.5 |
-55℃ to 175℃ |
|
|
RTSB06065M1 |
650 |
60 |
50 |
2.8 |
2.1 |
69.5 |
-55℃ to 175℃ |
TO263-7 |
|
RTSH/K050120M1 |
1200 |
50 |
58 |
3.2 |
2.2 |
120 |
-55℃ to 175℃ |
TO247-3/4 |
|
RTSH/K080120M1 |
1200 |
80 |
38 |
3.6 |
1.8 |
39 |
-55℃ to 175℃ |
|
|
RTSH/K080120M1Z |
1200 |
80 |
42 |
3.6 |
2.7 |
76 |
-55℃ to 175℃ |
|
|
RTSH/K160120M1 |
1200 |
160 |
19 |
2.9 |
1.9 |
43 |
-55℃ to 175℃ |
|
|
RTSH/P750120M1 |
1200 |
750 |
6.4 |
4.3 |
3.3 |
15.8 |
-55℃ to 175℃ |
TO247-3/ |
|
RTSK015120M1 |
1200 |
15 |
117 |
4 |
2 |
222 |
-55℃ to 175℃ |
TO247-4 |
|
RTSK020120M1 |
1200 |
20 |
119 |
4 |
1.8 |
216 |
-55℃ to 175℃ |
|
|
RTSK032120M1 |
1200 |
32 |
75 |
4 |
2.2 |
112 |
-55℃ to 175℃ |
|
|
RTSK050120M1 |
1200 |
40 |
68 |
4 |
2.2 |
112 |
-55℃ to 175℃ |
|
|
RTSB050120M1 |
1200 |
50 |
58 |
3.2 |
2.2 |
120 |
-55℃ to 175℃ |
TO263-7 |
|
RTSB080120M1Z |
1200 |
85 |
42 |
3.6 |
2.7 |
76 |
-55℃ to 175℃ |
|
|
RTSB160120M1Z |
1200 |
160 |
20 |
3.6 |
1.9 |
43 |
-55℃ to 175℃ |
|
|
RTSK045170M1 |
1700 |
45 |
72 |
4 |
2 |
185 |
-55℃ to 175℃ |
TO247-4 |
|
RTSK100170M1 |
1700 |
1000 |
6.7 |
4.5 |
1.8 |
16.5 |
-55℃ to 175℃ |
|
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![SIC Field Effect Transistors]()
SIC Field Effect TransistorsSilicon Carbide MOSFET (SiC MOSFET) 650V / 1200V / 1700V High Voltage Power Transistor Series
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