Overview

1700V and 2200V SiC Schottky Diodes are high-voltage power rectifiers designed for high-frequency and high-efficiency power conversion. Compared with conventional silicon fast recovery diodes, SiC technology provides extremely low reverse-recovery behavior, reduced switching losses and excellent high-temperature stability. The series is suitable for high-voltage power supplies, laser power supplies, X-ray systems, capacitor charging, electrostatic equipment and industrial high-frequency power electronics.

Product Range

Product Series	Maximum Repetitive Reverse Voltage	Current Class	Technology	Main Advantage
1700V SiC	1700V	Up to 10A	SiC Schottky	Ultra-fast switching
2200V SiC	2200V	Up to 10A	SiC Schottky	High-voltage operation

Key Features

* 1700V and 2200V high-voltage ratings

* Silicon Carbide Schottky diode technology

* Virtually no conventional reverse-recovery current

* Very low switching losses

* High-frequency switching capability

* Low reverse-recovery charge

* Excellent high-temperature performance

* High power density

* Reduced switching stress on power devices

* Suitable for compact high-frequency power supplies

* TO-220 and customized package options available according to product design

Why Choose SiC Instead of Conventional Silicon Fast Recovery Diodes?

Conventional silicon fast recovery diodes use a PN junction and require stored charge to be removed during turn-off. SiC Schottky technology eliminates the conventional minority-carrier storage mechanism associated with silicon PN junction recovery, making it particularly suitable for high-frequency switching applications.

SiC vs. Silicon Fast Recovery Diode

Feature	Silicon Fast Recovery Diode	SiC Schottky Diode
Semiconductor Material	Silicon	Silicon Carbide
Junction Type	PN Junction	Schottky
Reverse Recovery	Tens of nanoseconds	Extremely low / virtually no conventional recovery
Switching Loss	Higher	Lower
High-Frequency Operation	Good	Excellent
Reverse-Recovery Charge	Higher	Very low
High-Temperature Stability	Good	Excellent
Power Density	Moderate	High
High-Frequency Power Supply	Suitable	Highly recommended
Efficiency Optimization	Limited by recovery losses	Excellent potential
System Size	Conventional	Can support more compact designs

Technical Specification

Parameter	1700V Series	2200V Series
Semiconductor	SiC	SiC
Device Type	Schottky Diode	Schottky Diode
VRRM	1700V	2200V
Current Class@160℃	Up to 10A*	Up to 10A*
Surge Current	54A	54A
Forward Voltage	1.4V	2.0V
Leakage Current	5uA	5uA
Junction Temperature-	-55~175℃	-55~175℃
Storage Temperature	-55~175℃	-55~175℃
Package	TO-220-2L	TO-220-2L
Reverse Recovery	Extremely low	Extremely low
Switching Frequency	High-frequency capable	High-frequency capable
Operating Temperature	Application dependent	Application dependent

1700V SiC Diode

1700V SiC Schottky Diode for High-Frequency Power Supplies
The 1700V SiC Schottky diode is designed for applications requiring high blocking voltage, fast switching and low switching losses.
With a 1700V voltage rating, it can be considered for upgrading 1600V-class silicon fast recovery rectifiers when the circuit's voltage margin, thermal conditions and electrical characteristics are properly verified.

Recommended Applications

* High-frequency switching power supplies
* High-voltage DC power supplies
* PFC circuits
* LLC resonant converters
* High-frequency DC-DC converters
* Laser power supplies
* Industrial power supplies
* X-ray and medical power supplies
* High-voltage capacitor charging systems
* Pulse power systems
* RF and high-frequency equipment
* Electrostatic power supplies

2200V SiC Diode

2200V SiC Schottky Diode for High-Voltage Power Conversion
The 2200V SiC Schottky diode is developed for high-voltage applications requiring a higher blocking-voltage margin than conventional 1700V-class devices.
It is suitable for high-voltage rectification and high-frequency power conversion where reduced switching losses and high-temperature operation are important.

Recommended Applications
* 2kV-class high-voltage power supplies
* Industrial high-voltage rectifiers
* High-frequency power converters
* Laser power supplies
* X-ray high-voltage generators
* Medical high-voltage equipment
* Electrostatic precipitators
* Electrostatic spraying equipment
* High-voltage capacitor charging
* Pulse power equipment
* High-frequency industrial equipment

Replacement Considerations

Can a SiC Diode Replace a Silicon Fast Recovery Diode?
In many applications, a SiC Schottky diode can be used as an upgrade or replacement for a silicon fast recovery diode, but it should not be treated as a universal pin-to-pin replacement.

Before replacing the original silicon diode, engineers should verify:

1. Reverse voltage rating
2. Average forward current
3. Peak and surge current
4. Forward voltage drop
5. Junction capacitance
6. Thermal resistance
7. Switching frequency
8. Package and pin configuration
9. PCB creepage and clearance
10. System voltage transients and safety margin

Advantages for High-Frequency Applications

Lower Switching Loss

The very low reverse-recovery behavior of SiC Schottky diodes helps reduce turn-off losses compared with conventional silicon PN fast-recovery rectifiers.

Higher Switching Frequency

Lower switching losses can enable designers to increase switching frequency while maintaining thermal performance.

Higher Power Density

Higher switching frequencies can help reduce the size of magnetic components, filters and other passive components, enabling more compact power-conversion systems.

Improved Thermal Performance

Lower switching losses can reduce heat generation in high-frequency power conversion stages and provide greater flexibility for thermal design.

High-Temperature Operation

SiC is inherently suitable for demanding high-temperature power electronics applications and provides excellent thermal stability.

Typical Applications

01/

High-Frequency Power Supplies

SiC rectifiers are suitable for high-frequency power conversion systems where conventional silicon diode recovery losses become significant.

02/

Laser Power Supplies

The high-voltage blocking capability and fast switching characteristics make SiC diodes suitable for compact laser power supply architectures.

03/

X-Ray and Medical High-Voltage Systems

The 1700V and 2200V series can be evaluated for high-voltage rectification and capacitor charging stages in medical and industrial X-ray equipment.

04/

Electrostatic Equipment

Applications include electrostatic precipitators, electrostatic spraying systems and other high-voltage DC power supplies.

05/

Industrial High-Voltage Power Supplies

SiC technology can improve efficiency and switching performance in industrial high-voltage power conversion systems.

Custom SiC Diode Solutions

We support customized high-voltage SiC diode solutions for OEM and industrial applications.
Customization can be discussed according to:
* Voltage rating
* Current rating
* Forward voltage requirements
* Switching characteristics
* Package type
* Lead configuration
* Thermal requirements
* Electrical testing requirements
* Application-specific performance targets

For high-voltage OEM projects, customers can provide the circuit voltage, operating current, switching frequency, operating temperature and existing diode model. Our engineering team can recommend a suitable 1700V or 2200V SiC solution.

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