Introduction to the Silicon Carbide High-Voltage Diode Series
Silicon carbide (SiC) high-voltage diodes feature zero reverse recovery time, low high-frequency loss, low forward voltage drop, wide operating temperature range up to 175°C, high-temperature resistance and aging resistance, low switching loss, and excellent high-temperature stability. They are suitable for applications such as high-voltage power supplies, pulsed power systems, medical equipment, radar components, and specialized industrial power supplies.
The products are available in a variety of package options to meet different current and voltage requirements, and can be customized according to customer specifications.
|
Series |
Dimension |
IF(AV) |
VRRM |
Figure |
|
SIC-HVD |
Φ3×12mm |
10mA～1A |
4kV～25kV |
|
|
SIC-HVM |
Φ4.2×15mm |
50mA～5A |
6kV～30kV |
|
|
SIC-HVS |
4×2.6×2.2mm |
5mA～1A |
3kV～8kV |
|
|
SIC-HVU |
7×7×21mm |
500mA～10A |
6kV～50kV |
|
|
SIC-HVP |
Φ7.5×22mm |
500mA～10A |
6kV～50kV |
|
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![SIC High Voltage Diode Series]()
SIC High Voltage Diode SeriesSiC High Voltage Rectifier Diode Seriesh, High Voltage Silicon Carbide (SiC) Rectifier Diodes | 3kV–50kV | High Efficiency | OEM & Custom Solutions
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