High Efficiency SiC MOSFET for High Voltage Power Conversion Applications
Our Silicon Carbide MOSFET (SiC MOSFET) series is designed for high-performance power switching applications requiring high voltage capability, low conduction loss, fast switching speed, and excellent thermal stability.
Based on advanced 4H-SiC wide bandgap semiconductor technology, these SiC power transistors provide superior electrical performance compared with traditional silicon MOSFETs and IGBTs, making them ideal for EV chargers, solar inverters, energy storage systems, industrial power supplies, motor drives, and high-frequency power converters.
The product family covers:
* 650V SiC MOSFET
* 1200V SiC MOSFET
* 1700V SiC MOSFET
* Low RDS(on) options from 15mΩ to 160mΩ
* High current capability up to 119A
* Operating junction temperature up to 175°C
Product Highlights
High Voltage Blocking Capability
The SiC MOSFET series provides high voltage ratings:
Voltage Class Application
650V SiC MOSFET Industrial power supply, EV charging, PFC, server power
1200V SiC MOSFET Solar inverter, ESS, UPS, high voltage DC/DC
1700V SiC MOSFET Industrial motor drive, high voltage energy systems
The wide bandgap characteristics of silicon carbide enable higher voltage operation, faster switching and improved efficiency in power conversion systems.
Key Advantages
1.Low RDS(on) – Reduced Conduction Loss
With optimized SiC chip structure, these MOSFETs achieve ultra-low drain-source resistance:
* RDS(on): 15mΩ / 20mΩ / 32mΩ / 40mΩ / 50mΩ / 60mΩ
* Reduced conduction power loss
* Higher system efficiency
* Improved thermal performance
Lower RDS(on) helps reduce heat generation and improves power density in high-power applications.
2.Ultra-Fast Switching Performance
SiC MOSFET technology offers:
* High switching frequency capability
* Low switching energy loss
* Low gate charge
* Reduced EMI stress
* Smaller passive components
Compared with conventional silicon devices, SiC MOSFETs enable more compact and efficient power converter designs.
3.High Temperature Reliability
Designed for demanding industrial environments:
* Operating Junction Temperature:
-55°C to +175°C
Benefits:
* Stable operation under high temperature
* Improved system reliability
* Reduced cooling requirements
4.Low Gate Charge Design
Typical gate charge:
* Qg: 39nC ~ 222nC
Advantages:
* Faster turn-on / turn-off
* Lower driver power consumption
* Better switching efficiency
Main Product Specifications
|
Parameter |
Value |
|
Semiconductor Material |
Silicon Carbide (SiC) |
|
Device Type |
N-Channel SiC MOSFET |
|
Voltage Rating |
650V / 1200V / 1700V |
|
Drain Current |
6.4A ~ 119A |
|
RDS(on) |
15mΩ ~ 1000mΩ |
|
Gate Threshold Voltage |
2.8V ~ 4.5V |
|
Gate Charge |
15.8nC ~ 222nC |
|
Operating Temperature |
-55°C ~ +175°C |
|
Package Options |
TO-247, TO-247-4, TOLL, TO-263 |
Available SiC MOSFET Models
650V SiC MOSFET Series
|
Model |
VDS |
RDS(on) |
ID |
|
RTSH/K0406SM1 |
650V |
40mΩ |
72A |
|
RTSH/K0606SM1 |
650V |
60mΩ |
50A |
|
RTSK0406SM1Z |
650V |
40mΩ |
72A |
|
RTSK0606SM1Z |
650V |
60mΩ |
50A |
Package:
* TO247-3/4
* TO247-4
1200V SiC MOSFET Series
High voltage devices optimized for:
* Solar PV inverter
* Battery energy storage system
* EV charging system
* Industrial power conversion
Typical models:
|
Model |
RDS(on) |
ID |
|
RTSH/K050120M1 |
50mΩ |
58A |
|
RTSH/K080120M1 |
80mΩ |
38A |
|
RTSH/K160120M1 |
160mΩ |
19A |
|
RTSK015120M1 |
15mΩ |
117A |
|
RTSK020120M1 |
20mΩ |
119A |
|
RTSK032120M1 |
32mΩ |
75A |
|
RTSK050120M1 |
40mΩ |
68A |
Packages:
* TO247-4
* TO263-7
* TO247-3
1700V SiC MOSFET Series
Designed for extra high voltage applications:
Model Voltage RDS(on) Current
| Model | Voltage | RDS(on) | Current |
|
RTSK045170M1 |
1700V |
45mΩ |
72A |
|
RTSK100170M1 |
1700V |
1000mΩ |
6.7A |
Applications:
* Industrial inverter
* High voltage DC systems
* Renewable energy equipment
* Power conversion systems
Package Options
TO-247 Package
TO-247-4 Kelvin Package
TOLL / TO-263 Package
Advantages:
* Compact design
* High power density
* Suitable for space-limited applications
Typical Applications
EV Charging Systems
Solar Inverter
Energy Storage System (ESS)
Industrial Motor Drives
UPS & Data Center Power Supply
SiC MOSFET technology enables:
Why Choose Our SiC MOSFET?
✔ Advanced Silicon Carbide semiconductor technology
✔ Wide voltage range: 650V / 1200V / 1700V
✔ Ultra-low RDS(on) for energy saving
✔ Fast switching performance
✔ High temperature operation up to 175°C
✔ Multiple industrial packages available
✔ Customized solutions available for OEM customers
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