HVR05 High Voltage Rectifier Diode Overview
The HPT1700S Silicon Carbide (SiC) High Voltage Diode is a next-generation power semiconductor device designed for high voltage and high frequency power conversion applications.
Based on advanced SiC wide bandgap semiconductor technology, HPT1700S delivers superior switching performance compared with conventional silicon rectifier diodes.
With:
* 1700V repetitive peak reverse voltage (VRRM)
* 10A average forward current (IF(AV))
* 100A surge current capability (IFSM)
* Low reverse leakage current ≤5μA
* TO220-2L power package
HPT1700S provides excellent efficiency, thermal stability and reliability for demanding power electronics applications.
SiC power diodes are widely recognized for low switching losses, high-frequency capability and improved system efficiency compared with traditional silicon devices.
Product Features
1. 1700V High Voltage Blocking Capability
HPT1700S provides: VRRM = 1700V
The high voltage rating makes it suitable for:
* High voltage DC link systems
* Industrial converters
* Renewable energy power systems
* High voltage switching applications
2. 10A High Current Capability
Rated average forward current: IF(AV) = 10A
Suitable for continuous power conversion applications requiring:
* High efficiency
* Stable current conduction
* Compact design
3. SiC Technology Advantages
Compared with conventional silicon diodes, SiC technology provides:
✔ Lower switching loss
✔ Higher operating frequency
✔ Better thermal performance
✔ Higher voltage capability
✔ Improved system power density
SiC diodes are commonly used in high-frequency converters, PFC circuits, inverters and industrial power systems.
4. High Surge Current Capability
Maximum surge current:
IFSM = 100A
Strong surge resistance improves reliability during:
* Power startup
* Load switching
* Capacitor charging
* Transient overload conditions
5. Low Reverse Leakage Current
Reverse leakage current:
IR ≤5μA (Ta=25℃)
Benefits:
* Reduced standby power loss
* Improved system efficiency
* Higher reliability
HPT1700S Electrical Specifications
|
Parameter |
Symbol |
Value |
|
Product Type |
SiC High Voltage Diode |
|
|
Semiconductor Material |
Silicon Carbide (SiC) |
|
|
Repetitive Peak Reverse Voltage |
VRRM |
1700V |
|
Average Forward Current |
IF(AV) |
10A |
|
Maximum Surge Current |
IFSM |
100A |
|
Peak Forward Voltage |
VFM |
3V Max |
|
Reverse Leakage Current |
IR |
≤5μA |
|
Reverse Recovery Time |
Trr |
- |
|
Package |
TO220-2L |
Product Structure
Advanced Silicon Carbide Power Semiconductor Design
HPT1700S uses SiC material technology featuring:
* Wide bandgap semiconductor structure
* High breakdown voltage capability
* Fast switching characteristics
* Excellent thermal stability
The device is optimized for applications where traditional silicon diodes suffer from:
* High switching loss
* Excessive heat generation
* Limited frequency performance
Package Information
TO220-2L Power Package
Package:
TO220-2L
Advantages:
* Easy heat sink mounting
* Excellent thermal management
* Compact installation
* Suitable for high power density designs
Products Description
Industrial High Voltage Power Supply
HPT1700S is suitable for:
* Industrial switching power supplies
* High voltage DC power systems
* Power conversion equipment
* Battery energy systems
01
EV Charging Systems
Applications:
* EV fast charger power modules
* DC charging systems
* High efficiency converters
02
Renewable Energy Systems
Used in:
* Solar inverter systems
* Energy storage converters
* High voltage DC conversion
03
High Frequency Power Equipment
Applications:
* High frequency converters
* Laser power supplies
* Medical power systems
* Pulse power equipment
04
Advantages of HPT1700S
|
Feature |
Benefit |
|
1700V Voltage Rating |
High voltage system compatibility |
|
10A Current Capability |
Strong power handling |
|
SiC Technology |
Lower switching loss |
|
100A Surge Current |
Improved reliability |
|
Low Leakage Current |
Higher efficiency |
|
TO220 Package |
Easy thermal design |
HPTS Series SiC High Voltage Diode Family
|
Model |
VRRM |
IF(AV) |
IFSM |
VFM |
Package |
|
HPT1700S |
1700V |
10A |
100A |
3V |
TO220-2L |
|
HPT2200S |
2200V |
10A |
100A |
4V |
TO220-2L |
Manufacturer Supply Capability
We provide:
✔ SiC High Voltage Diode Manufacturing
✔ Silicon Carbide Power Semiconductor Solutions
✔ OEM / ODM Customization
✔ Industrial Bulk Supply
✔ High Reliability Semiconductor Components
Customization Options:
* Voltage rating customization
* Current rating customization
* Package customization
* Electrical parameter optimization
FAQ
Q: What is HPT1700S?
A: HPT1700S is a 1700V 10A silicon carbide high voltage diode designed for high efficiency power conversion and high frequency switching applications.
Q: What are the advantages of HPT1700S SiC diode?
A: HPT1700S provides lower switching losses, high voltage capability, high surge current resistance and excellent thermal stability compared with traditional silicon diodes.
Q: Where is HPT1700S used?
A: It is used in EV chargers, solar inverters, industrial power supplies, high frequency converters and high voltage DC systems.
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